Negative bias temperature instability on Si-passivated Ge-interface

Germanium pMOSFETs with Silicon-passivated interface (Ge/Si/SiO
2
/HfO
2
) are investigated for Negative Bias Temperature Instability (NBTI). Even though a high initial interface state density is measured, the stack shows a robustness toward NBTI stress, and the 10 year lifetime is ensured with a gate voltage overdrive V
G
−V
th
=−1.2V.