Effects of Si channel orientation on MOSFET characteristics

The Si channel surface orientation dependence of electrical characteristics in ultra-thin EOT gate MOSFETs was reviewed. The excellent DC and RF performance were obtained in ultra-thin SiO
2
gate p-MOSFETs with (110) oriented Si channel. The properties and electrical characteristics in n- and p-MOSFETs with 2 – 6 degree tilted off-axis (110) channel were also reported. The transconductance of p-MOSFET with off-axis channel was significantly degraded compared with that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved compared with that of normal channel. The changes were larger than those observed in slightly off-axis (100) samples. The gate leakage current and 1/f noise in (110) samples were also sensitive to off-axis angle.