A simple modeling of the early voltage of MOSFETs in weak and moderate inversion

This paper presents a simple model of the Early voltage for the MOS transistor operating in weak and moderate inversion. The model is based on a decomposition of the transistor channel into a region where the gradual-channel approximation holds and a region that is modeled as a reverse-biased juntion. Measurements of the characteristics of both nand p-channel transistors with different channel lengths in a 0.35 μm technology demonstrate the feasibility of the proposed model.