Ultra-shallow junction formation using flash annealing and advanced doping techniques

As the demand for ever shallower, highly active and abrupt junctions continues, it is important to look at both the doping and activation portions of junction formation as a unit process. Advanced doping is useless without annealing methods that limit diffusion and provide high levels of electrical activation and new annealing techniques cannot make the junctions shallower than the as-doped profiles. This work has looked at optimizing several types of advanced doping (Plasma Doping and beamline ion implantation of molecular dopants) and a flash lamp-based ms annealing approach. With this combination, very shallow, abrupt and low resistivity junctions can be formed. Careful characterization was used to ensure the accuracy of the sheet resistance and junction depth measurements.