High efficiency 600-mW pHEMT distributed power amplifier employing drain impedance tapering technique

4-stage distributed power amplifier (DPA) employing tapering the drain load networks to achieve high efficiency is reported. The active device with enhancement mode pHEMT (pseudomorphic High Electron Mobility Transistor) technology is used. Measurement results of 600 mW, 30 % of power-aided-efficiency (PAE) and gain of 10 dB is achieved within frequency range of 10–1800 MHz. Low supply voltage of 4.5 V is used for each device. Good agreement between measured and simulated results is obtained.