Nitrogen engineering in Titanium based high-k gate dielectrics on Ge

In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO
₂
interfacial layer to its oxynitride, and thus forming a TiO
₂
/GeO
_x
N
₃
/Ge stacked-gate structure with improved interfacial and electrical properties. Charge trapping, transient and reliability properties of nitrided gate dielectrics have also been investigated.