Microwave-frequency non-linear universal model for PIN diode

A non-linear equivalent circuit model for PIN diode for use in DC, AC, and transient analysis with good accuracy is described. The equivalent circuit parameters for the model are extracted from the bias-dependent s-parameters measured over the complete range of diode operational voltages and frequencies. The extracted bias dependent equivalent circuit parameters are fit to analytical expressions. To demonstrate the model, a PIN switching diode has been characterized and modeled. The model for the device is based on 30kHz-3GHz measured s-parameters, and the resulting model has been implemented in a commercially available circuit simulator (ADS). The model demonstrates good fidelity to the measured data for DC as well as high-frequency s-parameter analysis over a wide range of bias conditions. The model's accuracy has also been verified using independent time- domain transient measurements.