N+shallow junction formation using plasma doping and rapid thermal annealing

In this paper, n-type shallow junctions are formed with plasma doping technique, and examined by secondary ion mass spectrometer (SIMS), double crystal X-ray diffraction (DXRD) and 4-point probe analysis methods. Measured doping profiles reveal that the junction depth less than 300 Aring and minimum sheet resistance of 104.1 Omega are feasible.