Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation

Suppression of the on-resistance modulation caused by the current collapse phenomena in the high-voltage GaN-HEMT was successful by using dual-field plate (FP) structure and back-side FP. A 480-V/2A GaN-HEMT was designed and fabricated for power electronic applications. In this device, the on-resistance modulation was negligible as low as 5% even under an applied voltage of 300 V. Boost converter circuit was demonstrated using the fabricated device with an output power of 54 W, high power efficiency of 92.7% and high switching frequency of 1 MHz.