A. Device Description
The electrooptic device (Fig. 1) consists of a ring resonator embedded in a PIN device formed on a Silicon-On-Insulator substrate. The ring resonator and waveguide are formed with a silicon ridge waveguide of 200 nm X 450 nm cross section. A slab of 50 nm is used to inject carriers from the doped regions. The P and N doped regions are doped with 1019/cm3 dopant concentration. The PIN device is formed with concentric doping areas. The quality factor of the experimentally measured device was 12000. Top view schematic of ring modulator, P-i-N cross section is shown in the inset