High Temperature Antenna Switches in 130 nm SOI Technology

This paper presents the design and the behavior vs. temperature of RF antenna switches in a 130 nm SOI technology. The design is implemented using two types of transistors; floating body and body tied transistors. It is shown that the floating body transistor is the best candidate for the design of RF antenna switches implemented in a fully integrated RF communication system. Outstanding high temperature behavior is also emphasized on a temperature range from 25degC to