Abstract:
We demonstrate a novel phase change memory cell utilizing doped Ge nanowire pn-junction diode both as a bottom electrode and a memory cell selection device. This memory c...Show MoreMetadata
Abstract:
We demonstrate a novel phase change memory cell utilizing doped Ge nanowire pn-junction diode both as a bottom electrode and a memory cell selection device. This memory cell can be used for a cross-point memory array with diode selection. Using selective growth of isolated vertical nanowires in each cell, we have minimized the contact area below the lithography limit. A very low SET programming current of 10's of μA was achieved. RESET/SET resistance ratio of 100x was obtained. The diode provides 100x isolation between forward and reverse bias in the SET state.
Published in: 2007 IEEE Symposium on VLSI Technology
Date of Conference: 12-14 June 2007
Date Added to IEEE Xplore: 08 October 2007
Print ISBN:978-4-900784-03-1