Diamond MISFETs fabricated on high quality polycrystalline CVD diamond

Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 μm gate length were fabricated on high quality
II
a-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (f
_T
) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.