Present State and Future Tasks of III-V Bulk Crystal Growth

Semiconductor III-V compounds are now and in future of central importance for human life. The leading position of GaAs will be continuously developed further. Single crystalline yield of InP needs to increase essentially. Very high growth rates are expected for GaSb, GaN and A1N. Accordingly, the mastering of the melt-solid, vapour-solid and flux-solid phase transitions on higher technological level by more detailed fundamental knowledge is absolutely essential. VGF growth method is of raising relevance for 4-6(8)-inch GaAs, InP and GaSb crystals. Cost reduction, convection and stoichiometry control, exemption from boron, in situ prevention of precipitate generation, inclusion trapping, dislocation density and patterning as well as twinning are the main tasks of defect engineering.