CMOS Gyrator-C Active Transformers

This paper presents a systematic approach to synthesize gyrator-C active transformers using MOS transistors. The self and mutual inductances of ideal and non-ideal active transformers are investigated in detailed and the intrinsic relation between the self and mutual inductances is derived. The configurations of gyrator-C active transformers with multiple primary and secondary windings are developed. Practical implementations of the proposed gyrator-C active transformers are realized in TSMC's 1.8V 0.18
μ
m CMOS technology and their characteristics are analyzed using
Spectre
from Cadence Design Systems with BSIM3.3 device models. Simulation results are presented.