A Multi-band CMOS Low Noise Amplifier for Multi-standard Wireless Receivers

A novel multi-band low noise amplifier (LNA) that allows simultaneous reception of signals from several wireless standards is designed and implemented using a 0.18-μm CMOS technology. The circuit topology consists of a 3-stage wideband LNA and 2 notch filters. The designed LNA can provide concurrent three bands over 0.935~5.825 GHz with measured gain (S21) of 15~24 dB, input reflection ratio (S11) of -35~-7 dB, noise figure (NF) of 4.4~4.78 dB, and 3
^rd
order input intercept point (IIP3) of -15.3~-12.4dBm respectively. In addition, a minimum 8 dB of inter-band gain suppression is achieved. This work has achieved a better figure of merit (FOM) than other related works, in terms of gain, noise figure and power consumption trade-offs.