A Test Structure for Analysis of Asymmetry and Orientation Dependence of MOSFETs

A test structure to analyze asymmetry and orientation dependence of MOSFETs is presented. n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry of I
_Dsat
and I
_Bmax
with respect to the interchange of source and drain was examined. Although both I
_Dsat
and I
_Bmax
have similar channel orientation dependence, only I
_Bmax
in interchanged S/D measurements shows asymmetrical characteristics, which can be applied to a sensitive method for device asymmetry detection.