Scaling Behavior of In0.7Ga0.3As HEMTs for Logic

We have experimentally investigated the impact of lateral and vertical scaling of In
_0.7
Ga
_0.3
As HEMTs on their logic performance. Reducing the In
_0.52
Al
_0.48
As insulator thickness results in much better electrostatic integrity and improved short-channel effects down to a gate length of 60 nm. Our nearly enhancement-mode 60 nm HEMTs feature V
_T
= -0.02 V, DIBL = 93 mV/V and S = 88 mV/V. For a given value of I
_ON
/I
_OFF
= 10
³
, we obtain CV/I = 0.85 ps at V
_cc
= 0.5 V. For the same leakage current, these devices exhibit 2.5 times more current drive than state-of-the-art low-power 65 nm CMOS