A 58nm Trench DRAM Technology

The authors present for the first time the full integration scheme and 512Mb product data for a trench DRAM technology targeting the 58nm node. The key technology enablers such as an extended U-shape cell device (EUD), high performance support devices, trench capacitor with metal-insulator-silicon (MIS)/high-k dielectric and metal-in-collar (MIC), and low-k inter-level dielectric (ILD) are demonstrated