Dark current of AlGaAs/GaAs n-QWIP prepared on patterned (001) GaAs substrate by MOVPE

A 400mum times 400mum sized square quantum-well infrared photodetector with 30 periods of the GaAs/Al
_0.3
Ga
_0.7
As multiple quantum well has been prepared on patterned (001) GaAs substrate. The absorption spectrum at room temperature with normal incidence geometry is peaked at 9mum with a full width at half maximum (FWHM) of 3.7 mum. Dark current with influence of 300K background was measured at room temperature and at 77K