4H-SiC Diode with a RuOx and a RuWOx Schottky Contact Irradiated by Fast Electrons

The impact of radiation damage on the device performance of 4H-SiC Schottky diodes with a RuO
₂
and a RuWO
_x
Schottky contacts, which were irradiated at room temperature with 9 MeV electrons (absorbed dose of 50 gy), is studied. No degradation is observed from measured capacitance-voltage curves. The radiation-induced decrease of the Schottky barrier height is observed from current-voltage measurements. Eight electron deep energy levels are observed before irradiation, and eighteen electron levels are induced after irradiation by a standard deep level transient spectroscopy