MMIC Class-F Power Amplifiers using Field-Plated AlGaN/GaN HEMTs

Two simple class-F MMIC power amplifiers are described using 0.7mum field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density