3 Dimensional GAA Transitors : twin silicon nanowire MOSFET and multi-bridge-channel MOSFET

In this paper, as the candidates of MOSFET for high performance and channel length scale below 10 nm, gate-all-around (GAA) multi-bridge-channel MOSFETs (MBCFETs) and twin Si-nanowire MOSFETs (TSNWFETs) are introduced. These are Si-based transistors with an ultimate structure for future scaled devices. N-ch MBCFET with two bridges shows 3.5 mA/um and 13 nA/um of Ion and Ioff, respectively. N-ch TSNWFET shows 2.64 mA/um with two 10 nm diameter Si-wire and gate length of 30 nm. Both transistors show excellent short channel effects