The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers

The electrical behavior of InGaAs following Fe-ion bombardment at 77K temperature in n- and p-type InGaAs structures have been investigated in this paper. Maximum resistivity of ~4times10
⁶
Omega/sq and ~7times10
⁶
Omega/sq at optimum annealing temperatures of ~250 and 600degC has been determined for p- and n-type InGaAs materials, respectively. These thermally stable high resistive regions in InGaAs due to Fe-ion bombardment are close to the intrinsic limit of InGaAs. Fe acceptor ionization energy of ~0.35 eV have been determined from temperature-dependant study. Good agreement has been observed between the experimental results and that of the physical model developed to observe the effects of Fe
⁺
in InGaAs material