Abstract:
In this paper, we propose a pipe-lined self-reference read scheme of MRAM with read modify write which can make an operation period short. It also brings continuous read ...Show MoreMetadata
Abstract:
In this paper, we propose a pipe-lined self-reference read scheme of MRAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system
Published in: 2005 IEEE Asian Solid-State Circuits Conference
Date of Conference: 01-03 November 2005
Date Added to IEEE Xplore: 04 December 2006
ISBN Information:
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