65GHz Doppler Sensor with On-Chip Antenna in 0.18μm SiGe BiCMOS

A single-chip 65GHz Doppler radar transceiver with on-chip patch antenna is reported. Implemented in a production 0.18mum SiGe BiCMOS process, it features a differential output transmit power of 4.3dBm, 16.5dB single-ended down-conversion gain and a double-sideband noise figure of 12.8dB. The radar includes a 65GHz 2-stage cascode LNA with S
₁₁
<-15dB at 50-94GHz and 14dB gain at 65GHz, a double-balanced down-convert mixer, a SiGe HBT IF amplifier with low 1/f noise, a VCO and a 65GHz output buffer. The LO is provided by an integrated varactor-tuned 61-67GHz VCO optimized for low phase noise. The patch antenna is designed to be impedance-matched for dual-band operation at 62.8 and 64.6GHz. The use of lumped inductors in all blocks and a vertically-stacked transformer for single-ended to differential conversion in the receive path help reduce the transceiver area to 1mm times 1mm