I. Introduction
Ongoing advances in SiGe and III-V bipolar semiconductor technology, with transistor cutoff frequencies (transit and maximum oscillation frequency, and ) in excess of 300 GHz, have enabled circuit designs with maximum signal frequencies well beyond 100 GHz. for example, Fig. 1 depicts the progress of the maximum toggle frequency of static frequency dividers versus peak- and - using different semiconductor technologies. Record toggle rates of 110 GHz for SiGe-HBT-based devices with a of 225/300 GHz and of 150 GHz for InGaAs/InP-DHBT-based devices with a of 391/505 GHz have been achieved [1], [2].
The maximum toggle frequency of static frequency divider publications from years 1985–2005 versus peak- and - of the related semiconductor technology.