Scaling Considerations and Dielectric Breakdown Improvement of a Corrugated Capacitor Cell for a Future dRAM

Further scaling of a corrugated capacitor cell (CCC) consisting of a moat capacitor is discussed in terms of cell configuration device parameters. From the results of experimental analyses simulation, key parameters of cell scaling are suggested. In addition cell scalability, some improvements in dielectic breakdown of insulator are described. This insulator integrity is a key issue reliability of dRAM's having a CCC.