Abstract:
The silicon transistor base bias voltage necessary for linearly increasing collector current with temperature is derived. A constant voltage is shown to be adequate in pr...Show MoreMetadata
Abstract:
The silicon transistor base bias voltage necessary for linearly increasing collector current with temperature is derived. A constant voltage is shown to be adequate in practical applications, enabling temperature-independent small-signal diode conductance to be simply obtained.
Published in: IEEE Journal of Solid-State Circuits ( Volume: 2, Issue: 2, June 1967)