Abstract:
It is well known that a low-frequency-trap network can be added to the base of an inductively-degenerated common-emitter transconductance stage to improve its third-order...Show MoreMetadata
Abstract:
It is well known that a low-frequency-trap network can be added to the base of an inductively-degenerated common-emitter transconductance stage to improve its third-order intercept point, but not its 1-dB compression point. High-frequency equations in Volterra series are used to explain this phenomenon. Analytical and experimental results show that the third-order intercept point increases with the capacitance within the low-frequency-trap network.
Published in: IEEE Journal of Solid-State Circuits ( Volume: 35, Issue: 8, August 2000)
DOI: 10.1109/4.859519