Time-delay and memory effects in GaAs1-xPxinjection laser

The delay between turn-on of current and onset of lasing was measured in a GaAs
0.60
P
0.40
injection laser as a function of current. The delay can be as long as 700 ns but decreases with overdrive. The trap density is estimated at 10
¹⁹
cm
^-3
. A double-pulse experiment shows that the memory of the first pulse may persist for longer than a millisecond. A burst-of-pulses experiment indicates that the traps cannot be emptied optically by stimulated emission. A reverse bias was not able to empty the traps electrically.