I. Introduction
Photoconductive semiconductor switches (pcsss) are fabricated from a variety of materials, including silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC). The electrical and material characteristics of each semiconductor type are different, and their applications also vary, ranging from low-impedance high-current firing sets in munitions to high-voltage high-current pulsars for ground-penetrating radar. Since the device parameters (e.g., rise-time requirement for the PCSS for high-power microwave generation may be different from those used in the firing sets) for optimum performance also depend on the specific application type, the analysis of a PCSS should be based not only on the material characteristics but also on the operational dynamics for each application. Important parameters include the blocking voltage and the pulse rise time.