RF PECVD Characteristics for the Growth of Carbon Nanotubes in a $\hbox{CH}_{4}$–$ \hbox{N}_{2}$ Mixed Gas

Characteristics of radio-frequency plasma-enhanced chemical vapor deposition (PECVD) in the growth of carbon nanotubes (CNTs) in a CH
₄
-N
₂
mixed gas were investigated through characterization of the prepared CNTs and a numerical simulation. Preparation of the CNTs was performed by the single chamber plasma process where the catalyst sputter deposition using a capacitively coupled plasma and the PECVD using an inductively coupled plasma were carried out in the same discharge chamber. The characterization results indicated the usefulness of the single chamber process system. It was also found that CH
₄
, HCN, and C
₂
H
₆
radicals mainly contributed to the growth of CNTs.