Abstract:
Enhancement-mode n-channel power MOSFETs were investigated for rebound. They received 300 krad(Si) gamma dose under positive gate bias with source and drain grounded. The...Show MoreMetadata
Abstract:
Enhancement-mode n-channel power MOSFETs were investigated for rebound. They received 300 krad(Si) gamma dose under positive gate bias with source and drain grounded. The irradiated transistors were thermally annealed with all terminals shorted or under positive gate bias with drain and source shorted, at temperatures from 60°C to 150°C. Threshold voltage rebound was observed for some transistor types under certain experimental conditions.
Published in: IEEE Transactions on Nuclear Science ( Volume: 34, Issue: 6, December 1987)