Abstract:
A technique has been developed for fabricating digital position-sensitive detectors. The ion-implanted p+-contacts of high-purity germanium diodes were divided into sever...Show MoreMetadata
Abstract:
A technique has been developed for fabricating digital position-sensitive detectors. The ion-implanted p+-contacts of high-purity germanium diodes were divided into several elements by etching (SF6-plasma) small grooves (50 μm wide and 10 μm deep) to obtain the desired structures. As the etch mask served an evaporated layer of aluminum, which had received the required pattern either by using a wire mask during the deposition or by a photolithographic process. Various detector types produced according to this technique are described.
Published in: IEEE Transactions on Nuclear Science ( Volume: 32, Issue: 1, February 1985)