Totally Depleted Surface Barrier Detectors Made of Ultra-High Purity P-Type Silicon Crystals

Thick Surface Barrier Detectors were developed using new ultra-high-resisitivity (~100KΩ·cm) p-type Si crystals, which were crystalized from monosilane gas, after being purified through molecular sieves. The detectors have vacuum evaporated electrodes of Al on a surface and of Au on another, and their thickness are 12-13 mm. It was confirmed through this work, surface treatment to generate an accumulation layer to the Au side improved the charge collection. The fabrication procedures and performances of the detectors are discussed.