Radiation-Induced Interface Traps in Power Mosfets

Methods for estimating radiation-induced interface trap density from the current-voltage (I-V) characteristics of MOSFETs are described and applied to commercially available power MOSFETs. The power MOSFETs show severe degradation on radiation exposure with the effects of positive oxide trapped charge dominating; however, interface trap buildup is significant. The results are compared to experimental measurements available on other technologies.