Transient Radiation Effects in GaAs Devices: Bulk Conduction and Channel Modulation Phenomena in D-MESFET, E-JFET, and N+-Si-N+ Structures

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First Page of the Article

Published in: IEEE Transactions on Nuclear Science ( Volume: 31, Issue: 6, December 1984)

Page(s): 1502 - 1507

Date of Publication: 12 November 2007

DOI: 10.1109/TNS.1984.4333538

First Page of the Article

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