Heavy-Ion Track Structure in Silicon

The energy deposition in the vicinity of a heavy ion path in silicon has been investigated by a Monte Carlo transport analysis of the delta rays produced along the track. The dose as a function of radial distance is presented for C, A1, and Fe ions with energies between 10 and 10,000 MeV. The average dose in cylinders of radii between 10-3 and 1 μm as a function of the distance of the cylinder from the path is also presented.