High Sensitivity Non-Destructive Profiling of Radiation Induced Damage in MOS Structures

A new technique for determining in-depth profiles is presented. It is based on a modified and differentiated Zerbst plot. It operates down to doses of the 1010/cm2 range, and is non-destructive, fast and suited for MOS process control. Extraction of the doping profile is included. The results of 1 MeV and 2 MeV P+ and 600 keV He+ implants in Si are shown as an example. A temperature scan yields activation energies of 0.18 eV, 0.46 eV, and 0.49 eV resp.; for He, this level is localized above Ei, and its capture crossection is 4.7* 10-17 cm2.