Further Studies on Implanted High Purity Germanium Detectors

Ion implantation and glow discharge methods have been utilized to produce boron rectifying contacts on high purity N-type germanium. The behaviour of both kinds of contact are discussed with respect to the damage density and annealing as measured by electrical and backscattering properties. Ohmic contacts were obtained by phosphorus implantation, lithium diffusion and metal evaporation. The counters have been investigated with nuclear radiations (#x003B1;, ß, γ).