Electron Irradiation Effects on Al-Free Laser Diodes Emitting at 852 nm

852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with 1-MeV electrons at fluences ranging from 10
¹⁴
up to 10
¹⁶
e
^-
/cm
²
. Layers corresponding to the laser diodes materials were characterised using photoluminescence and time resolved photoluminescence. Laser diodes L-I-V characteristics were measured in pulsed and continuous regime.