I. Introduction
The response of silicon-on-insulator (SOI) devices to total dose irradiation is more complex than for bulk silicon devices. The buried oxide, a unique feature of SOI technology, introduces an additional parasitic structure that must be taken into account. The total dose response of fully depleted (FD) transistors is even more complex because of the electrical coupling effect between front and back gate transistors [1]–[3] through the depleted silicon film. On top of all the previously mentioned parasitic structures, complex mechanisms can be triggered by radiation-induced charge trapping in the buried oxide, such as a total dose latch phenomenon, triggered by floating body effects [4]–[7].