I. Introduction
CdZnTe has become a proven detection material with a high atomic number for good -ray stopping efficiency and a sufficiently large bandgap (1.7 eV) for room-temperature applications. The poor product for this material makes it difficult to operate in a planar electrode configuration. However, the adverse effects of poor hole mobility can be ignored when utilizing in a single-polarity charge sensing mode. That is, by sensing the movement of electrons solely, the slow-moving holes will no longer act to degrade detector performance. In this way, the favorable properties of CdZnTe as a room temperature -ray detection device can be exploited, while mitigating the normally detrimental effect of poor hole mobility.