I. Introduction
Single-Event burnout (SEB) is one of the catastrophic effects which could cause power MOSFETs to fail in space systems. It is initiated by a heavy ion striking a device in the offstate and creating electron-hole pairs along its path. The generated carrier current causes a forward biased condition of the base-emitter junction of the parasitic bipolar transistor (BJT), which is formed by the n source, the p-body, and the n-drift region, inherent in a vertical DMOS power transistor. If this BJT turns on while the drain is under a large bias, sufficient carrier multiplication occurs, resulting in excessive current flow that induces thermal destruction of the device [1].