Magnetoresistance and Current-Driven Resistance Change Measurements in NiFe Film With a Nanoconstriction

A nano fabricated planar point contact (PC) in NiFe film showed a magnetoresistance (MR) ratio of about 18%, and it stabilized at about 12%; with both values being much larger than those for the anisotropic MR (AMR) ratio of the film. The measurements of current-driven resistance change in the PC were also performed in which about 10.5% resistance change was observed. The saturated resistances coincided with the typical values in the MR measurements (MR: 12%). These results inspired correlation between MR and domain wall.