Device applications of multilayer films

A study has been made of the device applications of multilayer films of Permalloy-SiO-Permalloy. Of particular interest is the application to film memory, where domain wall creep is an important factor. A variety of samples of a
T_{p}/T_{d}/T_{p}
configuration was investigated. Under the conditions of this study, optimum results were obtained with a structure employing two 300 Å nonmagnetostrictive films separated by 1C kÅ of SiO. For this geometry, both writing and disturb characteristics are significantly improved relative to a conventional 600 Å film. An absence of wall creep is found in this structure, accounting for the improved disturb characteristics. Unexpected interactions are also found which influence the wall motion switching characteristics, but have no significant influence on memory characteristics.