The "Feldplatte" a new semiconductor magnetoresistance device

With a suitable arrangement of both semiconductor and electrodes, one can make a device of InSb, which exhibits a significant increase of ohmic resistance when placed in a magnetic field. An alloy of InSb is produced with 1.8 percent by weight of NiSb, the latter in the form of parallel arranged needles about 1 μ in diameter. Because of their high electrical conductivity) these needles eliminate the Hall effect and cause a great change of resistance when the material is subjected to a magnetic field. The field plate can be used for measuring fields between 10
^-3
G and 100 kG.