Influence of ion implantation on magnetostatic volume wave propagation

Magnetostatic forward volume wave (MSFVW) propagation perturbations induced by ion implantation in pure YIG films, have been investigated in order to perform high quality reflective arrays. Helium ions have been implanted at an energy between 40 and 340 keV with a dose of about 10
^16
4
He+/cm
²
, the thickness of YIG films being close to 20μm. The thickness of the YIG layer with a crystalline lattice perturbed by incident ions has been determined for different implantation conditions. In a theoretical approach of MSFVW propagation changes resulting from ion implantation, the perturbed YIG layer has been considered as nonmagnetic. A MSFVW group velocity decrease of 3.4% has been measured. This value is consistent with this theoretical model. Moreover after implantation no extra propagation loss has been observed up to 10GHz. MSFVW reflection coefficient on the wave impedance discontinuity induced by ion implantation has been determined It can reach 10%.