Properties of reactively sputtered superconducting films

A review of the applicability of reactive sputtering to the synthesis of several A15 and B1 superconductors was performed. Critical temperature, T
c
, of Nb
3
Ge and V
3
Si made by this method were found to be slightly lower than the highest reported values. T
c
's of V
3
Ge and NbC films were higher than found in bulk samples. Nb-Si films were nonsuperconducting. The preparation of pseudo-binary alloys of the Nb-V-Ge, Nb-V-Si and the Nb-Ge-Si systems resulted in no improvements in T
c
's. Fabrication of layered structures consisting of Nb-C-N and nonsuperconducting layers was investigated.